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STPS60H100C
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF(max) FEATURES AND BENEFITS

2 x 30 A 100 V 175C 0.72 V
K
A1 K A2
High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification
A2 A1 K
TO-220AB STPS60H100CT
DESCRIPTION Dual center tab Schottky rectifier suited for High Frequency server and telecom base station SMPS. Packaged in TO-220AB, this device combines high current rating and low volume to enhance both reliability and power density of the application. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt RMS forward voltage Average forward current Tc = 150C = 0.5 Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Per diode Per device tp = 10ms sinusoidal tp = 1s Tj = 25C Value 100 60 30 60 300 18100 -65 to + 175 175 10000 Unit V A A A W C C V/s
1 dPt ot * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink Rth ( j - a ) dTj
Order Codes Part Number STPS60H100CT
August 2004
Marking STPS60H100CT
REV. 1 1/5
STPS60H100C
THERMAL RESISTANCE Symbol Rth(j-c) Junction to case Rth(c)
When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Parameter Per diode Total Coupling
Value 1.0 0.7 0.4
Unit C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests conditions IR * Reverse leakage current Tj = 25C VR = VRRM Tj = 125C VF ** Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Pulse test: ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.6 x IF(AV) + 0.004 IF (RMS) * tp = 5 ms, < 2%
Min.
Typ 2 3
Max. 10 10 0.84 0.72 0.98 0.84
Unit A mA V
IF = 30A IF = 30A IF = 60A IF = 60A 0.67 0.92 0.8
2
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STPS60H100C
Fig 1: Average forwatd power dissipation versus average forward current (per diode).
PF(AV)(W)
26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 20 15
Rth(j-a)=15C/W
Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode).
IF(AV)(A)
35
= 0.1 = 0.05
= 0.2
= 0.5
30 25
Rth(j-a)=Rth(j-c)
=1
10
T
5
T
IF(AV)(A)
=tp/T
30
tp
0 35 0
=tp/T
25
tp
Tamb(C)
50 75 100 125 150 175
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1s)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(s)
10 100 1000
Tj(C)
0 0 25 50 75 100 125 150
Fig. 5: Non repetitive surge peak forward current versus overload duration.
IM(A)
400 350 300
Fig. 6: Relative variation of thermal impedance junction to case versus pulse.
Zth(j-c)/Rth(j-c)
1.0 0.9 0.8 0.7
250 200 150 100
IM
0.6
TC=50C
0.5 0.4
TC=75C
0.3
TC=125C
t
0.2 0.1 0.0
Single pulse
50 0 1.E-03
=0.5
t(s)
1.E-02 1.E-01 1.E+00
tp(s)
1.E-02 1.E-01 1.E+00
1.E-03
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STPS60H100C
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).
IR(mA)
1.E+02 10.0
F=1MHz VOSC=30mVRMS Tj=25C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values).
C(nF)
1.E+01
Tj=150C
Tj=125C
1.E+00
Tj=100C
1.E-01
Tj=75C
1.0
1.E-02
Tj=50C
1.E-03
Tj=25C
1.E-04 0 10 20 30 40 50
VR(V)
60 70 80 90 100
VR(V)
0.1 1 10 100
Fig. 9: Forward voltage drop versus forward current.
IFM(A)
100
Tj=125C (maximum values) Tj=25C (maximum values) Tj=125C (typical values)
10
VFM(V)
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
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STPS60H100C
PACKAGE MECHANICAL DATA TO-220AB REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151
H2 Dia L5 C
A
L7 L6
L2 F2 F1 L9 L4 F G1 G M E D
A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam.
ORDERING INFORMATION Ordering type STPS60H100CT

Marking STPS60H100CT
Package TO-220AB
Weight 2.20 g
Base qty 50
Delivery mode Tube
Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. Maximum torque value: 1.0 m.N.
REVISION HISTORY Table 1: Revision history Date 02-Aug-2004 Revision 1 Description of Changes First issue
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com
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